AP3P6R0S advanced power p-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss -30v simple drive requirement r ds(on) 6m fast switching characteristic i d 3 -80a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.8 /w rthj-a 40 /w data and specifications subject to change without notice operating junction temperature range storage temperature range parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 drain current, v gs @ 10v 3 (silicon limited) -55 to 150 drain current, v gs @ 10v -56 pulsed drain current 1 -320 total power dissipation 3 3.12 69.4 -55 to 150 total power dissipation + 20 -80 halogen-free product rating -30 -90 201606131 1 maximum thermal resistance, junction-ambient (pcb mount) 3 thermal data parameter g d s a p3p6r0 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. g d s to-263(s) .
AP3P6R0S electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-40a - - 6 m v gs =-4.5v, i d =-30a - - 9 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-5v, i d =-40a - 95 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =-30a - 54 86.4 nc q gs gate-source charge v ds =-15v - 17 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 15 - nc t d(on) turn-on delay time v ds =-15v - 13 - ns t r rise time i d =-40a - 80 - ns t d(off) turn-off delay time r g =3.3 - 100 - ns t f fall time v gs =-10v - 100 - ns c iss input capacitance v gs =0v - 7500 12000 pf c oss output capacitance v ds =-15v - 1050 - pf c rss reverse transfer capacitance f=1.0mhz - 370 - pf r g gate resistance f=1.0mhz - 3 6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-40a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-40a, v gs =0v, - 29 - ns q rr reverse recovery charge di/dt=-100a/s - 19 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.package limitation current is -80a . 2 .
AP3P6R0S fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 100 200 300 400 0481216 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -7.0v -6.0v -5.0v v g = -4.0v 0 40 80 120 160 200 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -8.0v -7.0v -6.0v -5.0v v g = -4.0v 3 4 5 6 7 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -30 a t c =25 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -40 a v g = - 10v 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = - 250ua 0 1 10 100 0 0.4 0.8 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c .
AP3P6R0S fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0.1 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0 2 4 6 8 0 20406080100 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -30a v ds = -15v 0 2000 4000 6000 8000 10000 1 5 9 13 17 21 25 29 33 37 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 40 80 120 160 200 012345 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v t j = -55 o c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) .
AP3P6R0S fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state fig 16. drain current v.s. case temperature resistance 5 0 20 40 60 80 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d = -1ma 0 10 20 30 40 0 40 80 120 160 200 -i d , drain current (a) r ds(on) (m ) t j =25 o c -4.5v v gs = -10v 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) limited by package .
AP3P6R0S marking information 6 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 3p6r0 ywwsss .
|
